Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device
DC Field | Value | Language |
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dc.contributor.author | Kim, Ji-Young | - |
dc.contributor.author | Kim, Cho-Rong | - |
dc.contributor.author | Lee, Jaeyeop | - |
dc.contributor.author | Park, Won-Wook | - |
dc.contributor.author | Leem, Jae-Young | - |
dc.contributor.author | Ryu, Hyukhyun | - |
dc.contributor.author | Lee, Won-Jae | - |
dc.contributor.author | Zhang, Ying-Ying | - |
dc.contributor.author | Jung, Soon-Yen | - |
dc.contributor.author | Lee, Hi-Deok | - |
dc.contributor.author | Kim, In-Kyum | - |
dc.contributor.author | Kang, Suk-June | - |
dc.contributor.author | Yuk, Hyung-Sang | - |
dc.contributor.author | Lee, Keunwoo | - |
dc.contributor.author | Jeon, Sunyeol | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-12-21T01:09:31Z | - |
dc.date.available | 2022-12-21T01:09:31Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177858 | - |
dc.description.abstract | The thermal stability of nickel silicide (NiSi) on a silicon-on-insulator (SOI) substrate after postsilicidation annealing (550–700 °C) is discussed in this paper. Nickel silicide technology, used for nanoscale complementary metal oxide semiconductor (CMOS) field-effect transistor (FET) devices, has a fundamental problem of thermal stability. Three different Pd concentrations in Ni–Pd alloy, 1, 5, and 10 at. %, were used to study the thermal stability of nickel silicide formed by a silicidation process. The Ni–Pd (10%) sample showed good thermal stability upon annealing at temperatures up to 700 °C for 30 min. Only a low-resistivity mononickel silicide (NiSi) phase peak was observed by X-ray diffraction (XRD) measurement, which was confirmed by Auger electron spectroscopy (AES) analysis. Uniformly formed nickel silicide with a good interface profile was obtained using the Ni–Pd (10%) sample according to field-emission scanning electron microscopy (FE-SEM) measurement. However, the Ni–Pd (5%) sample produced high-resistivity nickel disilicide (NiSi2) after annealing at 650 °C for 30 min. Four different layer structures, Ni, Ni/TiN, Ni/Co/TiN, and Ni–Pd (10%)/Co/TiN, were also used for further study. Among these structures, the Ni–Pd (10%)/Co/TiN layer structure had good thermal stability upon annealing at temperatures up to 700 °C, while the other structures deteriorated due to agglomeration above 550 °C. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1143/JJAP.47.7775 | - |
dc.identifier.scopusid | 2-s2.0-62249094492 | - |
dc.identifier.wosid | 000260443900003 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.10, pp.7775 - 7779 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 47 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 7775 | - |
dc.citation.endPage | 7779 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NISI FILMS | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | NI/PD/SI | - |
dc.subject.keywordPlus | NI/SI | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | thermal stability | - |
dc.subject.keywordAuthor | nickel silicide | - |
dc.subject.keywordAuthor | postsilicidation annealing | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | SOI | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.47.7775 | - |
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