Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device
- Authors
- Kim, Ji-Young; Kim, Cho-Rong; Lee, Jaeyeop; Park, Won-Wook; Leem, Jae-Young; Ryu, Hyukhyun; Lee, Won-Jae; Zhang, Ying-Ying; Jung, Soon-Yen; Lee, Hi-Deok; Kim, In-Kyum; Kang, Suk-June; Yuk, Hyung-Sang; Lee, Keunwoo; Jeon, Sunyeol; Jeon, Hyeongtag
- Issue Date
- Oct-2008
- Publisher
- IOP PUBLISHING LTD
- Keywords
- thermal stability; nickel silicide; postsilicidation annealing; CMOS; SOI
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.10, pp.7775 - 7779
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 10
- Start Page
- 7775
- End Page
- 7779
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177858
- DOI
- 10.1143/JJAP.47.7775
- ISSN
- 0021-4922
- Abstract
- The thermal stability of nickel silicide (NiSi) on a silicon-on-insulator (SOI) substrate after postsilicidation annealing (550–700 °C) is discussed in this paper. Nickel silicide technology, used for nanoscale complementary metal oxide semiconductor (CMOS) field-effect transistor (FET) devices, has a fundamental problem of thermal stability. Three different Pd concentrations in Ni–Pd alloy, 1, 5, and 10 at. %, were used to study the thermal stability of nickel silicide formed by a silicidation process. The Ni–Pd (10%) sample showed good thermal stability upon annealing at temperatures up to 700 °C for 30 min. Only a low-resistivity mononickel silicide (NiSi) phase peak was observed by X-ray diffraction (XRD) measurement, which was confirmed by Auger electron spectroscopy (AES) analysis. Uniformly formed nickel silicide with a good interface profile was obtained using the Ni–Pd (10%) sample according to field-emission scanning electron microscopy (FE-SEM) measurement. However, the Ni–Pd (5%) sample produced high-resistivity nickel disilicide (NiSi2) after annealing at 650 °C for 30 min. Four different layer structures, Ni, Ni/TiN, Ni/Co/TiN, and Ni–Pd (10%)/Co/TiN, were also used for further study. Among these structures, the Ni–Pd (10%)/Co/TiN layer structure had good thermal stability upon annealing at temperatures up to 700 °C, while the other structures deteriorated due to agglomeration above 550 °C.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.