Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co2Fe6B2 Free Layer using a Single SyAF [Co/Pt](n) Layeropen access
- Authors
- Choi, Jin-Young; Lee, Dong-gi; Baek, Jong-Ung; Park, Jea Gun
- Issue Date
- Feb-2018
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.8, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 8
- Number
- 1
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17797
- DOI
- 10.1038/s41598-018-20626-4
- ISSN
- 2045-2322
- Abstract
- A new perpendicular spin-transfer-torque magnetic-tunnel-junction (p-MTJ) spin-valve was developed to achieve a high tunneling magnetoresistance (TMR) ratio. It had a double MgO-based spin-valve structure with a top Co2Fe6B2 free layer and incorporated a single SyAF [Co(0.4 nm)/Pt(0.3 nm)](3) layer and a new buffer layer of Co(0.6)/Pt(0.3)/Co(0.4). It had a TMR ratio of 180% and anisotropy exchange field (H-ex) of 3.44 kOe after ex-situ annealing of 350 degrees C for 30 min under a vacuum below 10(-6) torr and a perpendicular magnetic field of 3 tesla, thereby ensuring a memory margin and avoiding read disturbance failures. Its high level of performance was due to the face-center-cubic crystallinity of the MgO tunneling barrier being significantly improved by decreasing its surface roughness (i.e., peak-to-valley length of 1.4 nm).
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