Magnetic properties of Mn+-implanted and annealed Si1-xGex thin films grown on p-Si(100) substrates
- Authors
- Kwon, Younghae; Kang, Kang, Taewon Wang; Shon, Yoon; Cho, Hoonyoung; Jeon, Hee Change; Park, Young S.; Lee, Dea-Uk; Kim, Tae Whan; Fu, Dejun; Fan, Xiangjun
- Issue Date
- Aug-2008
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- semiconductor; impurities in semiconductor
- Citation
- SOLID STATE COMMUNICATIONS, v.147, no.5-6, pp.161 - 164
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 147
- Number
- 5-6
- Start Page
- 161
- End Page
- 164
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178066
- DOI
- 10.1016/j.ssc.2008.05.029
- ISSN
- 0038-1098
- Abstract
- Mn+-implanted and annealed Si1-xGex thin films grown on p-Si (100) substrates were formed with the goal of producing (Si1-xGex)(1-y)Mn-y with a high ferromagnetic transition temperature (T-c). The double-crystal X-ray rocking Curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si1-xGex thin films were single crystalline. The magnetization Curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mill-implanted and annealed Si1-xGex thin films, and the magnetization Curves as functions of the temperature showed that the T-c value was above 300 K. These results indicate that the formed (Si1-xGex)(1-y)Mn-y thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.
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