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Electrical characterization of ZnO nano-particles embedded in a polyimide for application as a nano-floating gate memory
- Authors
- Lee, Dong Uk; Kim, Seon Pil; Lee, Tae Hee; Kim, Eun Eyu; Koo, Hyun-Mo; Cho, Won-Ju; Kim, Young-Ho
- Issue Date
- Jul-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ZnO; nano-floating gate memory; non-volatile; polyimide gate insulator
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.327 - 330
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 1
- Start Page
- 327
- End Page
- 330
- ISSN
- 0374-4884
- Abstract
- Nano-floating gate memory (NFGM) devices with ZnO nano-particles embedded in polyimide insulators were fabricated. The ZnO nano-particles were created by chemical reactions between polyamic acid and a zinc thin film. The size and the density of the ZnO nano-particles were about 10 nm and 2 x 10(11) cm(-2), respectively. The threshold voltage shift (Delta V-T) of the NFGM with ZnO nano-particles was about 2.35 V at the initial stage of the programming and the erasing operations. The subthreshold characteristics and the output current characteristics show that the NFGM with ZnO nano-particles embedded in polyimide has possibility for high-performance nonvolatile memory device applications.
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