Dependence of the stored charges and tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer
- Authors
- Oh, Do-Hyun; Lee, Soojin; Cho, Woon-Jo; Kim, Tae Whan
- Issue Date
- Jul-2008
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- nanostructures; nanomaterials; semiconducting silicon
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.310, no.14, pp.3290 - 3293
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 310
- Number
- 14
- Start Page
- 3290
- End Page
- 3293
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178191
- DOI
- 10.1016/j.jcrysgro.2007.12.068
- ISSN
- 0022-0248
- Abstract
- Dependence of the stored charges and the tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer formed by the sonochemical method was investigated by using electrostatic force microscopy (EFM) measurements. Bright-field transmission electron microscopy images showed that Si nanoparticles were embedded in a SiO2 layer. EFM images for the Si nanoparticles embedded in a SiO2 layer under applied bias voltages showed that the localized charges remained in the Si nanoparticles embedded in. a SiO2 layer. The stored charge in the Si nanoparticles embedded in a SiO2 layer increased with a decrease in the tunneling SiO2 thickness. While the threshold tunneling voltage increased with an increase in the tunneling oxide thickness, the mean amplitude of the tunneling voltage increased with a decrease in the thickness of the tunneling SiO2 layer.
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