Fabrication of low temperature polycrystalline silicon thin-film transistor nonvolatile memory devices for digital memory on glass applications

Abstract

We fabricated the nano-floating gate memory (NFGM) devices on the polycrystalline silicon (poly-Si) films crystallized by excimer laser annealing (ELA) method for thin-film transistor liquid-crystal display (TFT-LCD) with a new integration technology called digital memory on glass (DMOG). The In2O3 nano-dots were formed in polyimide gate insulating layers at low temperature as the charge storages of nonvolatile memory for DMOG applications. The memory window of low temperature poly-Si TIFT nonvolatile memory with In2O3 nano-dots embedded in polyimide was larger than 3.2 V and the memory characteristics were considerably improved by 3% hydrogen diluted N-2 ambient annealing.