Fabrication of low temperature polycrystalline silicon thin-film transistor nonvolatile memory devices for digital memory on glass applications
- Authors
- Koo, Hyun-Mo; Cho, Won-Ju; Lee, Dong Uk; Kim, Seon Pil; Kim, Eun Kyu; Jung, Jongwan
- Issue Date
- Apr-2008
- Publisher
- IOP PUBLISHING LTD
- Keywords
- excimer laser annealing; low temperature poly-Si TFT; nonvolatile memory; In2O3 metal nano-dots; polyimide gate insulator
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.4, pp.2728 - 2732
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 4
- Start Page
- 2728
- End Page
- 2732
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178804
- DOI
- 10.1143/JJAP.47.2728
- ISSN
- 0021-4922
- Abstract
- We fabricated the nano-floating gate memory (NFGM) devices on the polycrystalline silicon (poly-Si) films crystallized by excimer laser annealing (ELA) method for thin-film transistor liquid-crystal display (TFT-LCD) with a new integration technology called digital memory on glass (DMOG). The In2O3 nano-dots were formed in polyimide gate insulating layers at low temperature as the charge storages of nonvolatile memory for DMOG applications. The memory window of low temperature poly-Si TIFT nonvolatile memory with In2O3 nano-dots embedded in polyimide was larger than 3.2 V and the memory characteristics were considerably improved by 3% hydrogen diluted N-2 ambient annealing.
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