Fabrication and gas sensing properties of vertically aligned Si nanowires
- Authors
- Mirzaei, Ali; Kang, Sung Yong; Choi, Sun-Woo; Kwon, Yong Jung; Choi, Myung Sik; Bang, Jae Hoon; Kim, Sang Sub; Kim, Hyoun Woo
- Issue Date
- Jan-2018
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Silicon; Nanowires; Chemical etching; Gas sensors
- Citation
- APPLIED SURFACE SCIENCE, v.427, pp.215 - 226
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 427
- Start Page
- 215
- End Page
- 226
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17886
- DOI
- 10.1016/j.apsusc.2017.08.182
- ISSN
- 0169-4332
- Abstract
- In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H2O2 aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top-top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (R-g/R-a = 11.5 similar to 17.1) to H-2 gas (10-50 ppm) at 100 degrees C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top-top electrode structure that are fully compatible with well-developed Si technologies.
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