Theoretical prediction of 1-D molecular lines on the Si(001) surface

Abstract

We propose a facile method for the self-directed growth of 1D molecular lines on the H-terminated Si(001) surface. This method employing a single H-free dimer instead of a single DB greatly enhances the stability of the radical intermediate, thereby facilitating the chain reaction for ID molecular lines. The proposed method will stimulate experiments for fabrication of ID molecular lines which are strongly attached to the Si(001) substrate.