Annealing effect of the 6H-SiC semiconductor detector for alpha particles
- Authors
- Ha, Jang Ho; Kang, Sang Mook; Park, Se Hwan; Kim, Han-Soo; Cho, Yun-Ho; Lee, Jae-Hyung; Lee, Nam Ho; Kim, Jong Bum; Kim, Yong Kyun
- Issue Date
- Feb-2008
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- silicon carbide (SiC); radiation detectors; semiconductor detectors; annealing effect; alpha response
- Citation
- RADIATION MEASUREMENTS, v.43, no.2-6, pp.1140 - 1143
- Indexed
- SCIE
SCOPUS
- Journal Title
- RADIATION MEASUREMENTS
- Volume
- 43
- Number
- 2-6
- Start Page
- 1140
- End Page
- 1143
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178987
- DOI
- 10.1016/j.radmeas.2007.11.076
- ISSN
- 1350-4487
- Abstract
- Alpha-particle detectors based on 6H-SiC semiconductor were fabricated and their electrical and radiation performances were measured. Detector structure was Au/Ni/6H-SiC/Ni/Au multi-layer structure. The current-voltage characteristics of the SiC detectors were measured and the radiation response was evaluated by Pu-238 with 5.5 MeV alpha particles at room temperature in air. The 6H-SiC detectors were annealed by a rapid temperature annealing (RTA) device at 100 and 300 degrees C for 10 min. The Schottky barrier heights (SBHs) of detectors were determined according to annealing processes. The SBHs of 6H-SiC detector were increased as annealing temperature increases. From I-V measurement leakage currents at a biased voltage were decreased as annealing temperature increased. As a result, Au/Ni/6H-SiC type of alpha-particle semiconductor detector showed good performance after thermal treatment up to 300 degrees C.
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