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Etching characteristics of photoresist and low-k dielectrics by Ar/O-2 ferrite-core inductively coupled plasmas

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dc.contributor.authorKim, Hyoun Woo-
dc.contributor.authorLee, Jong Woo-
dc.contributor.authorHwang, Woon Suk-
dc.contributor.authorBeom, Hoan O.-
dc.contributor.authorLee, Seung Gol-
dc.contributor.authorPark, Se-Geun-
dc.contributor.authorKim, Joohee-
dc.contributor.authorChung, Duck Jin-
dc.contributor.authorChang, Sung Pil-
dc.contributor.authorJoo, Young-Chang-
dc.contributor.authorJoo, Junghoon-
dc.contributor.authorChung, Chin Wook-
dc.contributor.authorPark, Wan Jae-
dc.contributor.authorKang, Chang-Jin-
dc.contributor.authorJoo, Sukho-
dc.contributor.authorPark, Soon Oh-
dc.contributor.authorYoo, Chung-Gon-
dc.contributor.authorKim, Sung Kyeong-
dc.contributor.authorLee, Joung Ho-
dc.contributor.authorCho, Sang-Deog-
dc.contributor.authorChoi, Dae-Kyu-
dc.contributor.authorKim, Keeho-
dc.contributor.authorJang, Jeong-Yeol-
dc.date.accessioned2022-12-21T04:19:28Z-
dc.date.available2022-12-21T04:19:28Z-
dc.date.created2022-08-26-
dc.date.issued2008-02-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178997-
dc.description.abstractWe have investigated the characteristics of Ar/O-2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O-2/(O-2+Ar) gas flow ratio significantly affected the PR etching rate and the PR to low-k material etch selectivity. Fourier transform infrared spectroscopy (FTIR) and HF dipping test indicated that the etching damage to the low-k material decreased with decreasing O-2/(O-2+Ar) gas flow ratio.-
dc.language영어-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.titleEtching characteristics of photoresist and low-k dielectrics by Ar/O-2 ferrite-core inductively coupled plasmas-
dc.typeArticle-
dc.contributor.affiliatedAuthorChung, Chin Wook-
dc.identifier.doi10.1016/j.mee.2007.06.016-
dc.identifier.scopusid2-s2.0-47149094064-
dc.identifier.wosid000253030300010-
dc.identifier.bibliographicCitationMICROELECTRONIC ENGINEERING, v.85, no.2, pp.300 - 303-
dc.relation.isPartOfMICROELECTRONIC ENGINEERING-
dc.citation.titleMICROELECTRONIC ENGINEERING-
dc.citation.volume85-
dc.citation.number2-
dc.citation.startPage300-
dc.citation.endPage303-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusMETHYLSILSESQUIOXANE-
dc.subject.keywordAuthorphotoresist-
dc.subject.keywordAuthorlow-k material-
dc.subject.keywordAuthorICP-
dc.identifier.urlhttps://www.sciencedirect.com/science/article/pii/S0167931707006338?via%3Dihub-
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