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Etching characteristics of photoresist and low-k dielectrics by Ar/O-2 ferrite-core inductively coupled plasmas
- Authors
- Kim, Hyoun Woo; Lee, Jong Woo; Hwang, Woon Suk; Beom, Hoan O.; Lee, Seung Gol; Park, Se-Geun; Kim, Joohee; Chung, Duck Jin; Chang, Sung Pil; Joo, Young-Chang; Joo, Junghoon; Chung, Chin Wook; Park, Wan Jae; Kang, Chang-Jin; Joo, Sukho; Park, Soon Oh; Yoo, Chung-Gon; Kim, Sung Kyeong; Lee, Joung Ho; Cho, Sang-Deog; Choi, Dae-Kyu; Kim, Keeho; Jang, Jeong-Yeol
- Issue Date
- Feb-2008
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- photoresist; low-k material; ICP
- Citation
- MICROELECTRONIC ENGINEERING, v.85, no.2, pp.300 - 303
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 85
- Number
- 2
- Start Page
- 300
- End Page
- 303
- ISSN
- 0167-9317
- Abstract
- We have investigated the characteristics of Ar/O-2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O-2/(O-2+Ar) gas flow ratio significantly affected the PR etching rate and the PR to low-k material etch selectivity. Fourier transform infrared spectroscopy (FTIR) and HF dipping test indicated that the etching damage to the low-k material decreased with decreasing O-2/(O-2+Ar) gas flow ratio.
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Related Researcher
- Chung, Chin Wook
- COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)