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Work function shift mechanism of metal-gate electrode with Ru/Ti bilayer
- Authors
- Park, In Sung; Ko, Han Kyoung; Lee, Taeho; Park, Jungho; Choi, Duck Kyun; Ahn, Jinho; Park, Min Ho; Yang, Cheol Woong
- Issue Date
- Dec-2007
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.10, no.2, pp.H63 - H65
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 10
- Number
- 2
- Start Page
- H63
- End Page
- H65
- ISSN
- 1099-0062
- Abstract
- The work function shift mechanism of the bilayer metal-gate electrode system has been investigated. An abrupt variation of the metal work function of Ru/Ti/SiO2 was observed at a bottom layer thinner than 7 nm with the tunable range of nearly 1.3 eV. Two plausible explanations are suggested for the work function shift. One is the deposition coverage ratio of two metal layers on gate dielectric due to the sporadic and fast islandlike growth of an ultrathin bottom layer roughly below 1 nm and the other is the metal diffusion of the top layer for a thicker (< 7nm) bottom layer.
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)