Electrical characterization of non volatile memory device with In2O3 nano-particles embedded in polyimide

Abstract

We fabricated a nano-floating gate memory (NFGM) with In2O3 nano-particles embedded in polyimide insulators. Self-assembled In2O3 nano-particles were created by chemical reaction between polymer precursor and indium film. The particle size and density were about 7 nm and 6 X l0(ll) cm(-2), respectively. Electrical characterization of the NFGM with In2O3 nano-particles was performed, and the memory window was about 1.3 V at the initial status of writing and erasing operations.