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The study of graytone mask structure for manufacturing thin film transistor

Authors
Kang, H.J.Cha, Han-sunAhn, JinhoRyu, HKim, SWNam, Keesoo
Issue Date
Nov-2007
Publisher
MNC 2007
Citation
Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, pp.58 - 59
Indexed
SCOPUS
Journal Title
Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Start Page
58
End Page
59
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179332
DOI
10.1109/IMNC.2007.4456103
ISSN
0000-0000
Abstract
We researched three types of GTM structures for reduction technology of TFT-LCD manufacturing process. Through the simulation results, we confirmed that the slit TM mask structure was superior, which has good Gaussian and smooth curve in the graytone area of residual photoresist. Also this slit TM mask has controllability of phase shift and transmittance by controlling the TM layer. But more researches for slit TM mask are still needed and investigation for TM mask blanks and photomask must be done additionally.
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서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles

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