The study of graytone mask structure for manufacturing thin film transistor
- Authors
- Kang, H.J.; Cha, Han-sun; Ahn, Jinho; Ryu, H; Kim, SW; Nam, Keesoo
- Issue Date
- Nov-2007
- Publisher
- MNC 2007
- Citation
- Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, pp.58 - 59
- Indexed
- SCOPUS
- Journal Title
- Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
- Start Page
- 58
- End Page
- 59
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179332
- DOI
- 10.1109/IMNC.2007.4456103
- ISSN
- 0000-0000
- Abstract
- We researched three types of GTM structures for reduction technology of TFT-LCD manufacturing process. Through the simulation results, we confirmed that the slit TM mask structure was superior, which has good Gaussian and smooth curve in the graytone area of residual photoresist. Also this slit TM mask has controllability of phase shift and transmittance by controlling the TM layer. But more researches for slit TM mask are still needed and investigation for TM mask blanks and photomask must be done additionally.
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