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High-gain wideband CMOS low noise amplifier with two-stage cascode and simplified Chebyshev filteropen access

Authors
Kim, Sung SooLee, Young SopYun, Tae Yeoul
Issue Date
Oct-2007
Publisher
WILEY
Keywords
cascode; Chebyshev; CMOS; LNA; UWB
Citation
ETRI JOURNAL, v.29, no.5, pp.670 - 672
Indexed
SCIE
SCOPUS
KCI
Journal Title
ETRI JOURNAL
Volume
29
Number
5
Start Page
670
End Page
672
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179516
DOI
10.4218/etrij.07.0207.0025
ISSN
1225-6463
Abstract
An ultra-wideband low-noise amplifier is proposed with operation up to 82 GHz The amplifier is fabficated with a 0.18-mu m CMOS process and adopts a two-stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power The Proposed UWB LNA achieves a measured power-gain bandwidth product of 399.4 GHz.
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서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

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