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High temperature stability of bulk Ti3SiC2 materials in air
- Issue Date
- Sep-2007
- Publisher
- Trans Tech Publications Ltd.
- Keywords
- Chemical stability; Oxidation; Ternary carbide; Ti3SiC2
- Citation
- Materials Science Forum, v.534-536, no.PART 2, pp 1037 - 1040
- Pages
- 4
- Indexed
- SCOPUS
- Journal Title
- Materials Science Forum
- Volume
- 534-536
- Number
- PART 2
- Start Page
- 1037
- End Page
- 1040
- ISSN
- 0255-5476
1662-9752
- Abstract
- The Ti3SiC2 materials were synthesized by hot pressing TiCx and Si powder mixtures. The matrix grains were lamellar, having a small amount of TiCx. The high-temperature stability was investigated by subjecting Ti3SiC2 to high-temperature oxidation up to 1200°C in air. Ti3SiC 2 began to oxidize appreciably above 850°C. The oxidation resulted in the formation of the oxide layer that consisted of TiO2 and SiO2. The scales formed were adherent.
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Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
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