Schottky barrier heights of semi-insulating 6H-SiC irradiated by high-dose gamma-rays
- Authors
- Ha, Jang Ho; Kang, Sang Mook; Cho, Youn Hyun; Park, Se Hwan; Kim, H. S.; Lee, J. H.; Lee, Na Hoo; Kim, Yong Kyun; Kim, JK
- Issue Date
- Sep-2007
- Publisher
- ELSEVIER
- Keywords
- Schottky barrier height; radiation detector; SiC; semiconductor detector
- Citation
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.580, no.1, pp.416 - 418
- Indexed
- SCIE
SCOPUS
- Journal Title
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
- Volume
- 580
- Number
- 1
- Start Page
- 416
- End Page
- 418
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/179670
- DOI
- 10.1016/j.nima.2007.05.068
- ISSN
- 0168-9002
- Abstract
- The 6H-SiC radiation detector samples were irradiated by (CO)-C-60 gamma-rays. The irradiation was performed with dose rates of 5 and 15 kGy/h for 8 hours, respectively. Metal/semiconductor contacts on the surface were fabricated by using a thermal evaporator in a high vacuum condition. The 6H-SiC detectors have metal contacts of Au(200 nm)/Ni(30 nm) at Si-face and of Au(200 nm)/Ti(30 nm) at C-face. I V characteristics of the 6H-SiC radiation detectors were measured by using the Keithley 4200-SCS parameter analyzer with self-voltage sources. From the I-V curve, we analyzed the Schottky barrier heights (SBHs) on the basis of the thermionic emission theory. As a result, the 6H-SiC semiconductor detector showed similar SBHs independent of the dose rates of the irradiation with (CO)-C-60 gamma-rays.
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