Study of the current-voltage characteristics of a SiC radiation detector irradiated by Co-60 gamma-rays

Abstract

The SiC semiconductor has recently emerged as an attractive material for an ionization radiation detection. A wide bandgap (3.03 eV) and high radiation damage resistance allow for the fabrication of detectors capable of operating at a high-temperature and in high radiation fields. The major aim of our study is to develop a robust detector which will be applied to harsh radiation environments. In this study, we fabricated the SiC radiation detectors and measured the current-voltage characteristics of SiC detectors irradiated by Co-60 gamma-ray source. The I-V curves showed a decrease of the leakage current with increasing dose rate of Co-60 gamma-ray in the 0-100V bias voltage range.