Electrical properties of digital-alloy (AlxGa1-x)As/GaAs during molecular beam epitaxy growth
- Authors
- Kim, Jin Soak; Kim, Eun Kyu; Song, Jin Dong; Lee, Jung Il
- Issue Date
- Jun-2007
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- digital-alloy; superlattices; MBE; AlAs/GaAs; deep-level transient spectroscopy
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1912 - 1915
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 50
- Number
- 6
- Start Page
- 1912
- End Page
- 1915
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180037
- DOI
- 10.3938/jkps.50.1912
- ISSN
- 0374-4884
- Abstract
- We have investigated the electrical properties of digital-alloy AlGaAs on GaAs by using capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods. During molecular beam epitaxy growth, digital-alloy and analogue-alloy samples were prepared. The digital-alloy layer consists of hundreds of AlAs and GaAs layers each thickness of 2 monolayers. Most properties of the digital alloy were similar to the analogue alloy, but some electrical properties from these of digital-alloy were quite different to the analogue-alloy from the C-V and low-temperature DLTS measurements. Especially, the superlattice structures slightly interrupt carrier motion at low temperatures (< 80 K); then, a signal whose origin seems to be a hetero barrier of the GaAs/AlGaAs quantum well is found, and its average activation energy is estimated to be about 45 meV.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180037)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.