Electrical and optical properties of a GaN n(+)-p junction with high-energy electron irradiation
- Authors
- Lee, Dong Uk; Kim, Eun Kyu; Lee, Byung Cheol; Oh, Dae Kon
- Issue Date
- Jun-2007
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- DLTS; GaN; diode; electron irradiation
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1904 - 1907
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 50
- Number
- 6
- Start Page
- 1904
- End Page
- 1907
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180038
- DOI
- 10.3938/jkps.50.1904
- ISSN
- 0374-4884
- Abstract
- We report on the electrical and optical properties of a GaN n(+)-p junction diode structure that was grown by metal-organic chemical vapor deposition (MOCVD) and was fabricated and irradiated by using an electron beam with energies of 1 MeV and 2 MeV at electron irradiation dose of 1 x 10(15) cm(-2) and 1 x 10(16) cm(-2) for each energy. The deep level transient spectroscopy (DLTS) results show that defect states were generated in the GaN n(+)-p diodes after the electron irradiations. The defect densities and the energy locations of the defect states between the energy gap showed a dependence on the irradiation energy and dose. Also, the diode's optical responsivity was characterized in the ultraviolet region.
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