Electron and hole storage in a floating gate consisting of Si nanocrystals embedded in a SiO2 layer
- Authors
- Oh, Do Hyun; Lee, Soojin; Cho, Woon Jo; Kim, Jae Ho; Kim, Tae Whan
- Issue Date
- Jun-2007
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Si nanocrystals; sonochemical method; charge storage
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1755 - 1759
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 50
- Number
- 6
- Start Page
- 1755
- End Page
- 1759
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180042
- DOI
- 10.3938/jkps.50.1755
- ISSN
- 0374-4884
- Abstract
- The charge storage in a nano-floating gate consisting of Si nanocrystals (Si-NCs) embedded in a SiO2 layer formed on a Si substrate by using a sonochemical method was investigated. The transmission electron microscopy image and the photoluminescence spectrum showed that Si-NCs were embedded in a SiO2 layer. The capacitance-voltage curves and the electrostatic force microscopy (EFM) images showed that charge storage appeared in the Si-NCs embedded in a SiO2 layer. The EFM images for the Si-NCs embedded in a SiO2 layer under positive and negative voltages showed that electrons and holes were captured in the Si-NCs. The present results indicate that EFM images provide promising evidence for charge storage in Si-NCs embedded in a SiO2 layer.
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