Effect of O-2 plasma treatment on hole-injection enhancement for organic light-emitting devices with transparent Au : Al anodes
- Authors
- Lee, Su Hwan; Kim, Dal Ho; Yang, Hee-Doo; Lee, Gon-Sub; Park, Jea-Gun
- Issue Date
- May-2007
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- OLED; organic light-emitting device; metal anode; Al2O3
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.5, pp.1327 - 1331
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 50
- Number
- 5
- Start Page
- 1327
- End Page
- 1331
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180167
- DOI
- 10.3938/jkps.50.1327
- ISSN
- 0374-4884
- Abstract
- Ali An : ultrathin Al layer is investigated as the anode for organic light-emitting devices (OLEDs). However, without surface modification of the An or An : ultrathin Al anode, the OLED usually exhibits poor performance. Therefore, to obtain good performance of OLED, we applied an O-2 plasma treatment after Al deposition on the An anode. The O-2 plasma treatment of the ultrathin Al layer can greatly enhance the hole injection ability compared with anodes using only An or An : ultrathin Al without O-2 plasma treatment. The OLED using the Au : O-2 plasma pretreated ultrathin Al layer anode demonstrate improved current density and luminance characteristics compared with other anodes, such as Au or An : ultrathin Al without O-2 plasma treatment. The driving voltages of our devices with An only, An : Al, and An : pre-treated Al anode devices are about 18.5 V, 16 V, and 6.6 V, respectively, at a current density of 100 mA/cm(2). The voltages to obtain a luminance of 1000 cd/m(2) for An only and An : pre-treated Al anode devices are needed approximately 18.7 V and 6.5 V, respectively.
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