Resistance switching characteristics for nonvolatile memory operation of binary metal oxides
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, In Sung | - |
dc.contributor.author | Kim, Kyong Rae | - |
dc.contributor.author | Lee, Sangsul | - |
dc.contributor.author | Ahn, Jinho | - |
dc.date.accessioned | 2022-12-21T08:48:40Z | - |
dc.date.available | 2022-12-21T08:48:40Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180272 | - |
dc.description.abstract | The resistance switching behaviors Of SiO2, HfO2, and TiO2 are investigated to elucidate their universal physical origins. It is demonstrated that a multideposition film fabrication process consisting of repeated thin film deposition and low-temperature annealing in O-2 ambient leads to superior resistance switching behaviors, such as forming-free switching characteristics, low switching voltage, and high resistance ratio of low- and high-resistance states compared with the conventional sputtered TiO2 film. From the resistance switching characteristics of binary metal oxide films, it is also observed that the device operation parameters, including reset/set voltages and resistance ratio, are related to the dielectric constants of the oxides. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.title | Resistance switching characteristics for nonvolatile memory operation of binary metal oxides | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.1143/JJAP.46.2172 | - |
dc.identifier.scopusid | 2-s2.0-34547890352 | - |
dc.identifier.wosid | 000247050200072 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.4B, pp.2172 - 2174 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.citation.volume | 46 | - |
dc.citation.number | 4B | - |
dc.citation.startPage | 2172 | - |
dc.citation.endPage | 2174 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC-LAYER DEPOSITION | - |
dc.subject.keywordPlus | TIO2 THIN-FILMS | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordAuthor | resistance switching effect | - |
dc.subject.keywordAuthor | resistance random access memory | - |
dc.subject.keywordAuthor | binary metal oxide | - |
dc.subject.keywordAuthor | dielectric constant | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.46.2172 | - |
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