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Electronic properties of self-assembled CdTe quantum wires grown on ZnTe buffer layers
- Authors
- Song, Sook Hyung; Woo, Jong Tae; Kim, JH; Lee, In hwan; Kim, Tae Whan; Lee, Hong Seok; Park, Hong Lee
- Issue Date
- Mar-2007
- Publisher
- 한국물리학회
- Keywords
- CdTe/ZnTe quantum wires; electronic properties; interband transitions
- Citation
- Journal of the Korean Physical Society, v.50, no.3, pp 793 - 796
- Pages
- 4
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 50
- Number
- 3
- Start Page
- 793
- End Page
- 796
- ISSN
- 0374-4884
1976-8524
- Abstract
- The photoluminescence (PL) spectra at several temperatures of self-assembled CdTe/ZnTe quantum wires (QWRs) grown by using molecular-beam epitaxy and atomic layer epitaxy showed that the PL peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E-1-HH1) shifted to lower energy with increasing temperature. The electronic subband energies were calculated by using a variable-sized meshing finite difference method (FDM). The experimental (E-1-HH1) transitions calculated by using the FDM taking into account strain effects are in reasonable agreement with the calculated (E-1-HH1) transitions. The present results could help improve understanding of the electronic properties of the CdTe/ZnTe QWRs.
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