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Surface morphologies and optical properties in CdxZn1-xTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates
- Issue Date
- Mar-2007
- Publisher
- 한국물리학회
- Keywords
- nanostructures; quantum dots; CdZnTe; atomic force microscopy; photoluminescence
- Citation
- Journal of the Korean Physical Society, v.50, no.3, pp 759 - 762
- Pages
- 4
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 50
- Number
- 3
- Start Page
- 759
- End Page
- 762
- ISSN
- 0374-4884
1976-8524
- Abstract
- We have studied the growth of self-assembled Cd0.6Zn0.4Te/ZnTe quantum dots (QDs) grown on both GaAs (100) and Si (100) substrates by using molecular beam epitaxy (MBE). The atomic force microscopy (AFM) images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The photoluminescence (PL) spectra at 25 K for the Cd0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates correspond to the exciton transition from the ground-state electronic subband to the ground-state heavy-hole band (E-1-HH1). The activation energy of the electrons confined in the Cd0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent PL spectra.
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