Improved Long-Term Stability of Low-Temperature Polysilicon Thin-Film Transistors by Using a Tandem Gate Insulator with an Atomic Layer of Deposited Silicon Dioxide
DC Field | Value | Language |
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dc.contributor.author | Lee, Sungsoo | - |
dc.contributor.author | Park, Jinseong | - |
dc.contributor.author | Hong, Yongtaek | - |
dc.date.accessioned | 2021-07-30T04:52:37Z | - |
dc.date.available | 2021-07-30T04:52:37Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1803 | - |
dc.description.abstract | In this study, we report a substantial improvement in the long-term stability of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) with a tandem gate insulator composed of silicon dioxide (SiO₂) deposited by using atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD). Negative-bias temperature instability (NBTI) tests showed that threshold-voltage (ΔVth) shifts were significantly smaller than when only a plasma-enhanced chemical vapor deposition (PECVD) structure was used. We believe that the unique stoichiometric characteristics and the reduction in the interfacial trap density (Dit) produced by the SiO₂ gate insulator that had been fabricated using ALD enhanced the long-term stability of the LTPS TFTs. These results suggest a tandem structure gate insulator with high-quality ALD-based SiO₂ thin film can provide an important improvement in the characteristics of the p-channel LTPS TFTs required for advanced active matrix organic light-emitting diodes (AMOLEDs) applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Improved Long-Term Stability of Low-Temperature Polysilicon Thin-Film Transistors by Using a Tandem Gate Insulator with an Atomic Layer of Deposited Silicon Dioxide | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jinseong | - |
dc.identifier.doi | 10.3938/jkps.77.277 | - |
dc.identifier.scopusid | 2-s2.0-85089976930 | - |
dc.identifier.wosid | 000563637300002 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.77, no.4, pp.277 - 281 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 77 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 277 | - |
dc.citation.endPage | 281 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002617413 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | SI TFTS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordAuthor | LTPS TFT | - |
dc.subject.keywordAuthor | ELA | - |
dc.subject.keywordAuthor | Poly-Si | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | NBTI | - |
dc.identifier.url | https://link.springer.com/article/10.3938/jkps.77.277 | - |
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