Improved Long-Term Stability of Low-Temperature Polysilicon Thin-Film Transistors by Using a Tandem Gate Insulator with an Atomic Layer of Deposited Silicon Dioxide
- Authors
- Lee, Sungsoo; Park, Jinseong; Hong, Yongtaek
- Issue Date
- Aug-2020
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- LTPS TFT; ELA; Poly-Si; ALD; NBTI
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.77, no.4, pp.277 - 281
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 77
- Number
- 4
- Start Page
- 277
- End Page
- 281
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1803
- DOI
- 10.3938/jkps.77.277
- ISSN
- 0374-4884
- Abstract
- In this study, we report a substantial improvement in the long-term stability of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) with a tandem gate insulator composed of silicon dioxide (SiO₂) deposited by using atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD). Negative-bias temperature instability (NBTI) tests showed that threshold-voltage (ΔVth) shifts were significantly smaller than when only a plasma-enhanced chemical vapor deposition (PECVD) structure was used. We believe that the unique stoichiometric characteristics and the reduction in the interfacial trap density (Dit) produced by the SiO₂ gate insulator that had been fabricated using ALD enhanced the long-term stability of the LTPS TFTs. These results suggest a tandem structure gate insulator with high-quality ALD-based SiO₂ thin film can provide an important improvement in the characteristics of the p-channel LTPS TFTs required for advanced active matrix organic light-emitting diodes (AMOLEDs) applications.
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