Post-RTA effect on the electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seong Je | - |
dc.contributor.author | Shim, Tae Hun | - |
dc.contributor.author | Park, Jea Gun | - |
dc.contributor.author | Jung, Myung Ho | - |
dc.contributor.author | Cho, Won Ju | - |
dc.date.accessioned | 2022-12-21T09:11:01Z | - |
dc.date.available | 2022-12-21T09:11:01Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180483 | - |
dc.description.abstract | The effect of the surface roughness of strained Si grown on relaxed SiGe-on-insulator on the electrical characteristics of n-MOSFETs was investigated. The surface roughness-induced degradations of the driving current and leakage current were minimized by applying, after conventional rapid thermal annealing (RTA), an additional furnace annealing consisting of 30 min in a N-2 ambient at 500 degrees C. The improvements resulted from the post-RTA process decreasing the charge density of the interface state. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Post-RTA effect on the electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea Gun | - |
dc.identifier.doi | 10.3938/jkps.50.514 | - |
dc.identifier.scopusid | 2-s2.0-33847780206 | - |
dc.identifier.wosid | 000244269500028 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.2, pp.514 - 518 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 50 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 514 | - |
dc.citation.endPage | 518 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001194030 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | MOBILITY ENHANCEMENT | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | SGOI | - |
dc.subject.keywordAuthor | RTA | - |
dc.subject.keywordAuthor | strained-Si | - |
dc.subject.keywordAuthor | heat treatment | - |
dc.subject.keywordAuthor | interface property | - |
dc.subject.keywordAuthor | leakage | - |
dc.subject.keywordAuthor | post-RTA | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?uid=8422&vmd=Full | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.