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Post-RTA effect on the electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET
- Issue Date
- Feb-2007
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- SGOI; RTA; strained-Si; heat treatment; interface property; leakage; post-RTA
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.2, pp.514 - 518
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 50
- Number
- 2
- Start Page
- 514
- End Page
- 518
- ISSN
- 0374-4884
- Abstract
- The effect of the surface roughness of strained Si grown on relaxed SiGe-on-insulator on the electrical characteristics of n-MOSFETs was investigated. The surface roughness-induced degradations of the driving current and leakage current were minimized by applying, after conventional rapid thermal annealing (RTA), an additional furnace annealing consisting of 30 min in a N-2 ambient at 500 degrees C. The improvements resulted from the post-RTA process decreasing the charge density of the interface state.
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Related Researcher
- Park, Jea Gun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)