Cobalt metal nanoparticles embedded in SiO2 dielectric layer for the application of nonvolatile memory
- Authors
- Yang, Jung Yup; Yoon, Kap Soo; Choi, Won Joon; Do, Young Ho; Kim, Ju Hyung; Kim, Chae Ok; Hong, Jin Pyo
- Issue Date
- Feb-2007
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- nonvolatile memory; metal nanoparticles
- Citation
- CURRENT APPLIED PHYSICS, v.7, no.2, pp.147 - 150
- Indexed
- SCIE
SCOPUS
KCI
OTHER
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 7
- Number
- 2
- Start Page
- 147
- End Page
- 150
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180499
- DOI
- 10.1016/j.cap.2006.03.002
- ISSN
- 1567-1739
- Abstract
- Metal-oxide-semiconductor structures (MOS) with the embedded Co nanoparticles (NPs) were efficiently fabricated by utilizing an external laser irradiation technique for the application of nonvolatile memory. Images of high resolution transmission electron microscopy measurements exhibited that the Co NPs of 5 nm in diameter were clearly embedded in SiO2 gate oxide. Capacitance-voltage measurements certainly exhibited flat-band voltage shift of 2.2 V from 2 V to -8 V in sweeping range. The retention characteristics of MOS capacitors with the embedded Co NPs were also studied as a function of tunnel oxide thickness to confirm the suitability of nonvolatile memory devices with metal NPs. The experimental results reveal that our unique laser process will give possible promise for experimental efficient formation or insertion of metal NPs inside the gate oxide.
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