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Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method
- Authors
- Kuk, Seoungwoo; Bang, Seokhwan; Kim, Inhoe; Jeon, Sunyeol; Jeon, Hyeongtag; Park, Hyung-Ho; Chang, Ho Jung
- Issue Date
- Jan-2007
- Publisher
- Trans Tech Publications Ltd.
- Keywords
- ALD; Hall-effect measurement; ZnS
- Citation
- Materials Science Forum, v.544-545, pp 689 - 692
- Pages
- 4
- Indexed
- SCOPUS
- Journal Title
- Materials Science Forum
- Volume
- 544-545
- Start Page
- 689
- End Page
- 692
- ISSN
- 0255-5476
1662-9752
- Abstract
- ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 ?/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.
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