Formation and interface analysis of Ti/Ni/Ti/Au ohmic contacts on n-type 6H-SiC
- Authors
- Lee, JW; Angadi, Basavaraj; Park, HC; Park, Deok Hai; Choi, Jang Wook; Choi, Won Kook; Kim, Tae Whan
- Issue Date
- Jan-2007
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.10, pp.H849 - H852
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 154
- Number
- 10
- Start Page
- H849
- End Page
- H852
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180571
- DOI
- 10.1149/1.2761526
- ISSN
- 0013-4651
- Abstract
- We present the results of Ti/Ni/Ti/Au multilayer ohmic contacts on n-type 6H-SiC and their interface analysis. The as-deposited contacts show rectifying behavior and, with the increase in annealing temperature, they gradually transform to high-quality ohmic contacts exhibiting linear current-voltage characteristics. The interface evolution was analyzed through glancing angle X-ray diffraction, Auger electron spectroscopy, and atomic force microscopy. The TiSi2 and Ni2Si formed at the interfaces during the low-temperature annealing initiate the conversion from Schottky to ohmic behavior, while the increased Ni2Si formation at high-temperature annealing makes the perfect ohmic contacts. The results were interpreted through the thermodynamic reaction mechanisms.
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