Magnetic and optical properties of (Ga1-xMnx)As diluted magnetic semiconductor quantum wires with above room ferromagnetic transition temperature
- Authors
- Jeon, Him Chan; Kang, Tae Won; Kim, Tae Whan; Yu, Young Jun; Jhe, Wonho; Song, Se Ahn
- Issue Date
- Jan-2007
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.101, no.2, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 101
- Number
- 2
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180596
- DOI
- 10.1063/1.2422914
- ISSN
- 0021-8979
- Abstract
- Scanning electron microscopy and high-resolution transmission electron microscopy measurements showed that the self-assembled (Ga0.8Mn0.2)As quantum wires (QWRs) grown on GaAs (100) substrates by using molecular beam epitaxy were straight crystals. The magnetization curve as functions of the magnetic field at 5 K indicated that the (Ga0.8Mn0.2)As QWRs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga0.8Mn0.2)As diluted magnetic semiconductor (DMS) QWRs was as high as 350 K. Near-field scanning optical microscopy spectra showed the interband transitions of the (Ga0.8Mn0.2)As QWRs, indicative of the Mn atoms acting as substituents. These results indicate that the (Ga1-xMnx)As DMS QWRs with a high Mn concentration hold promise for potential application in spin optoelectric devices operating at room temperature.
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