Electrical and reliability characteristics of HfO2 MOS capacitor with Mo metal gate electrode

Abstract

The electrical and reliability characteristics of a metal-oxide-semiconductor (MOS) device with high-kappa HfO2 dielectric film were investigated with three metal electrodes. Whereas a Pt electrode has a higher work function but a smaller capacitance due to a thick interfacial layer, Ru and Mo electrodes show lower equivalent oxide thickness and smaller work function rolling off due to excellent quality of the interfacial layer. Compared to devices with a Ru electrode, the MOS capacitor with a Mo electrode exhibits higher dielectric breakdown voltage and excellent reliability characteristics.