Electrical and reliability characteristics of HfO2 MOS capacitor with Mo metal gate electrode
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, In-Sung | - |
dc.contributor.author | Lee, Taeho | - |
dc.contributor.author | Ko, Hankyong | - |
dc.contributor.author | Ahn, Jinho | - |
dc.date.accessioned | 2022-12-21T09:43:14Z | - |
dc.date.available | 2022-12-21T09:43:14Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-12 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180669 | - |
dc.description.abstract | The electrical and reliability characteristics of a metal-oxide-semiconductor (MOS) device with high-kappa HfO2 dielectric film were investigated with three metal electrodes. Whereas a Pt electrode has a higher work function but a smaller capacitance due to a thick interfacial layer, Ru and Mo electrodes show lower equivalent oxide thickness and smaller work function rolling off due to excellent quality of the interfacial layer. Compared to devices with a Ru electrode, the MOS capacitor with a Mo electrode exhibits higher dielectric breakdown voltage and excellent reliability characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Electrical and reliability characteristics of HfO2 MOS capacitor with Mo metal gate electrode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.scopusid | 2-s2.0-33846387145 | - |
dc.identifier.wosid | 000243198700015 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, pp.S760 - S763 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 49 | - |
dc.citation.startPage | S760 | - |
dc.citation.endPage | S763 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | WORK FUNCTION | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | HIGH-KAPPA | - |
dc.subject.keywordPlus | CMOS | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | ALLOY | - |
dc.subject.keywordAuthor | metal electrode | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | work function rolling off | - |
dc.subject.keywordAuthor | reliability | - |
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