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Electrical and reliability characteristics of HfO2 MOS capacitor with Mo metal gate electrode

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dc.contributor.authorPark, In-Sung-
dc.contributor.authorLee, Taeho-
dc.contributor.authorKo, Hankyong-
dc.contributor.authorAhn, Jinho-
dc.date.accessioned2022-12-21T09:43:14Z-
dc.date.available2022-12-21T09:43:14Z-
dc.date.created2022-09-16-
dc.date.issued2006-12-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180669-
dc.description.abstractThe electrical and reliability characteristics of a metal-oxide-semiconductor (MOS) device with high-kappa HfO2 dielectric film were investigated with three metal electrodes. Whereas a Pt electrode has a higher work function but a smaller capacitance due to a thick interfacial layer, Ru and Mo electrodes show lower equivalent oxide thickness and smaller work function rolling off due to excellent quality of the interfacial layer. Compared to devices with a Ru electrode, the MOS capacitor with a Mo electrode exhibits higher dielectric breakdown voltage and excellent reliability characteristics.-
dc.language영어-
dc.language.isoen-
dc.publisherKOREAN PHYSICAL SOC-
dc.titleElectrical and reliability characteristics of HfO2 MOS capacitor with Mo metal gate electrode-
dc.typeArticle-
dc.contributor.affiliatedAuthorAhn, Jinho-
dc.identifier.scopusid2-s2.0-33846387145-
dc.identifier.wosid000243198700015-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, pp.S760 - S763-
dc.relation.isPartOfJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume49-
dc.citation.startPageS760-
dc.citation.endPageS763-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusWORK FUNCTION-
dc.subject.keywordPlusTHERMAL-STABILITY-
dc.subject.keywordPlusHIGH-KAPPA-
dc.subject.keywordPlusCMOS-
dc.subject.keywordPlusSI-
dc.subject.keywordPlusDIELECTRICS-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusALLOY-
dc.subject.keywordAuthormetal electrode-
dc.subject.keywordAuthorHfO2-
dc.subject.keywordAuthorwork function rolling off-
dc.subject.keywordAuthorreliability-
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COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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