Electrical and reliability characteristics of HfO2 MOS capacitor with Mo metal gate electrode
- Authors
- Park, In-Sung; Lee, Taeho; Ko, Hankyong; Ahn, Jinho
- Issue Date
- Dec-2006
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- metal electrode; HfO2; work function rolling off; reliability
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, pp.S760 - S763
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 49
- Start Page
- S760
- End Page
- S763
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180669
- ISSN
- 0374-4884
- Abstract
- The electrical and reliability characteristics of a metal-oxide-semiconductor (MOS) device with high-kappa HfO2 dielectric film were investigated with three metal electrodes. Whereas a Pt electrode has a higher work function but a smaller capacitance due to a thick interfacial layer, Ru and Mo electrodes show lower equivalent oxide thickness and smaller work function rolling off due to excellent quality of the interfacial layer. Compared to devices with a Ru electrode, the MOS capacitor with a Mo electrode exhibits higher dielectric breakdown voltage and excellent reliability characteristics.
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