Fabrication of two-dimensional periodic structures in an amorphous silicon film by four-beam interference lithography
- Authors
- Lee, Geon Joon; Lee, YoungPak; Kim, Kyung-Rae; Jang, Moon Ik; Yoon, Chong Seung; Ahn, Jinho; Son, Yong-Duck; Jang, Jin
- Issue Date
- Dec-2006
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- four-beam interference lithography; two-dimensional periodic structure; amorphous silicon; crystallization
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, pp.S716 - S720
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 49
- Start Page
- S716
- End Page
- S720
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180672
- ISSN
- 0374-4884
- Abstract
- Two dimensional (2D) periodic structures were produced in an amorphous silicon (a-Si) film by means of femtosecond-laser interference lithography. In order to fabricate 2D periodic structures in the a-Si film, we used four-beam interference lithography. The four beams were generated by using two crossed gratings, and the four beams were,superposed onto the a-Si film by using a focusing lens so that 2D periodic patterns were realized in the sample through four-beam interference lithography. In order to prepare two crossed gratings, titanium dioxide gratings were fabricated by a lift-off technique. The surface relief profiles of the gratings were designed so that the +1(st)- and -1(st)-order diffracted light intensities were maximized. When the He-Ne laser beam was incident on the prepared 2D periodic structures, the 2D diffraction pattern was observed. The scanning-electronmicroscopy images of the laser-patterned samples showed that the formation of the 2D periodic structure in the a-Si film was ascribed to the combined effect of spatially selective crystallization and laser ablation, which were induced by a laser-interference pattern.
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