Charging and discharging mechanims of vertically stacked Ni 1-xFex self-assembled nanoparticle arrays embedded in polyimide layers
- Authors
- Jung, Jea Hun; You, Joo Hyung; Kim, Jae-Ho; Kim, Tae Whan; Yoon, Chong Seung; Kim, Young-Ho
- Issue Date
- Oct-2006
- Publisher
- IEEE
- Keywords
- Flash memory; Multilevel; Ni1-xFex nanoparticle arrays; Polymer
- Citation
- 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, v.1, pp.474 - 475
- Indexed
- SCOPUS
- Journal Title
- 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
- Volume
- 1
- Start Page
- 474
- End Page
- 475
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180878
- DOI
- 10.1109/NMDC.2006.4388823
- ISSN
- 0000-0000
- Abstract
- Experimental and theoretical capacitance-voltage (C-V) curves for the Al/PI/multiple-stacked Ni1-xFex nanoparticle arrays/PI/p-Si (100) structures at 300 K showed that the flatband voltage shift of the metal-insulator-semiconductor capacitor was affected by the value of the sweep voltage, indicative of the variations of the charged electron density in the multiple-stacked Ni1-xFex nanoparticle arrays. Experimental and theoretical current-voltage (I-V) results showed that the current increased with increasing applied voltage due to thermally assisted tunneling effect. Charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in PI layers are described on the basis of the C-V and I-V results.
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