Optical properties and deep levels in annealed Si1-xMnx bulk materials
- Authors
- Kwon, Yunhee; Kang, Tae Won; Park, Cheol-Joon; Cho, Hoonyoung; Kim, Tate Whan; Lee, Jooyoung; Wang, Kang L.; Kim, Bo Ock; Kim, Sunmo; Cho, Yong-Hoon
- Issue Date
- Oct-2006
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- semiconductors; impurities in semiconductor; electronic states; optical properties
- Citation
- SOLID STATE COMMUNICATIONS, v.140, no.1, pp.14 - 17
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 140
- Number
- 1
- Start Page
- 14
- End Page
- 17
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180883
- DOI
- 10.1016/j.ssc.2006.07.032
- ISSN
- 0038-1098
- Abstract
- The optical proper-ties and the deep levels in bulk Si1-xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1-xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1-xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1-xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1-xMnx material.
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