Effect of H2O evolving from TEOS based SiO2 film on the EEPROM cell characteristic
- Authors
- Lee, Junghwan; Chung, Eunyoung; Moon, Won; Suh, Dong Hack
- Issue Date
- Oct-2006
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- EEPROM; cell Vt; SiO2
- Citation
- MICROELECTRONIC ENGINEERING, v.83, no.10, pp.2001 - 2003
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 83
- Number
- 10
- Start Page
- 2001
- End Page
- 2003
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180885
- DOI
- 10.1016/j.mee.2006.03.003
- ISSN
- 0167-9317
- Abstract
- In this paper, we investigate the effect of water (H2O) molecules evolving from silicon dioxide (SiO2) film deposited by low pressure chemical vapor deposition (LPCVD) at 670 degrees C on the transistor characteristic of an electrically erasable programmable read only memory (EEPROM) cell. Fourier Transform Infra red (FT-IR) analysis reveals that H2O is captured during film deposition and diffused to silicon surface during high thermal processing. The diffused HO molecules lower threshold voltage (V-t) of cell transistor and, thus, leakage current of the cell transistor is increased. In erased cell, V-t lowering is 0.25 V in which it increases leakage current of cell transistor from 1 to 100 pA. This results in the lowering of high voltage margin of a 512 Kb EEPROM from 2.8 to 2.6 V at 85 degrees C.
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