Strained si engineering for nanoscale MOSFETs
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jea-Gun | - |
dc.contributor.author | Lee, Gon-Sub | - |
dc.contributor.author | Kim, Tae-Hyun | - |
dc.contributor.author | Hong, Seuck-Hoon | - |
dc.contributor.author | Kim, Seong-Je | - |
dc.contributor.author | Song, Jin-Hwan | - |
dc.contributor.author | Shim, Tae-Hun | - |
dc.date.accessioned | 2022-12-21T10:10:23Z | - |
dc.date.available | 2022-12-21T10:10:23Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-10 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180915 | - |
dc.description.abstract | We have revealed a strain relaxation mechanism for strained Si grown on a relaxed SiGe-on-insulator structure fabricated by the bonding, dislocation sink, or condensation method. Strain relaxation for both the bonding and dislocation sink methods was achieved by grading the Ge concentration; in contrast, the relaxation for the condensation method was achieved through Ge atom condensation during oxidation. In addition, we estimated the surface roughness and threading-dislocation pit density for relaxed SiGe layer fabricated by the bonding, dislocation sink, or condensation method. The surface roughness and threading-dislocation pit density for the bonding, dislocation sink, and condensation methods were 2.45, 0.46, and 0.40 nm and 5.0 x 10(3), 9 X 10(3), and 0, respectively. In terms of quality and cost-effectiveness, the condensation method was superior to the bonding and dislocation sink methods for forming strained Si on a relaxed SiGe-on-insulator structure. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Strained si engineering for nanoscale MOSFETs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.contributor.affiliatedAuthor | Kim, Tae-Hyun | - |
dc.identifier.doi | 10.1016/j.mseb.2006.07.014 | - |
dc.identifier.scopusid | 2-s2.0-33750340596 | - |
dc.identifier.wosid | 000242511800010 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.134, no.2-3, pp.142 - 153 | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.volume | 134 | - |
dc.citation.number | 2-3 | - |
dc.citation.startPage | 142 | - |
dc.citation.endPage | 153 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ON-INSULATOR | - |
dc.subject.keywordPlus | MOBILITY ENHANCEMENT | - |
dc.subject.keywordPlus | ELECTRON | - |
dc.subject.keywordPlus | SOI | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | RELAXATION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordAuthor | relaxed SiGe | - |
dc.subject.keywordAuthor | SGOI | - |
dc.subject.keywordAuthor | strained Si | - |
dc.subject.keywordAuthor | electron mobility | - |
dc.subject.keywordAuthor | post RTA | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0921510706004041?via%3Dihub | - |
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