Strained si engineering for nanoscale MOSFETs
- Authors
- Park, Jea-Gun; Lee, Gon-Sub; Kim, Tae-Hyun; Hong, Seuck-Hoon; Kim, Seong-Je; Song, Jin-Hwan; Shim, Tae-Hun
- Issue Date
- Oct-2006
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- relaxed SiGe; SGOI; strained Si; electron mobility; post RTA
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.134, no.2-3, pp.142 - 153
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
- Volume
- 134
- Number
- 2-3
- Start Page
- 142
- End Page
- 153
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180915
- DOI
- 10.1016/j.mseb.2006.07.014
- ISSN
- 0921-5107
- Abstract
- We have revealed a strain relaxation mechanism for strained Si grown on a relaxed SiGe-on-insulator structure fabricated by the bonding, dislocation sink, or condensation method. Strain relaxation for both the bonding and dislocation sink methods was achieved by grading the Ge concentration; in contrast, the relaxation for the condensation method was achieved through Ge atom condensation during oxidation. In addition, we estimated the surface roughness and threading-dislocation pit density for relaxed SiGe layer fabricated by the bonding, dislocation sink, or condensation method. The surface roughness and threading-dislocation pit density for the bonding, dislocation sink, and condensation methods were 2.45, 0.46, and 0.40 nm and 5.0 x 10(3), 9 X 10(3), and 0, respectively. In terms of quality and cost-effectiveness, the condensation method was superior to the bonding and dislocation sink methods for forming strained Si on a relaxed SiGe-on-insulator structure.
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