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Enhanced electrical characteristics of Au nanoparticles embedded in high-k HfO2 matrix

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dc.contributor.authorYang, Jung Yup-
dc.contributor.authorKim, Ju Hyung-
dc.contributor.authorChoi, Won Joon-
dc.contributor.authorDo, Young Ho-
dc.contributor.authorKim, Chae Ok-
dc.contributor.authorHong, Jin Pyo-
dc.date.accessioned2022-12-21T10:36:51Z-
dc.date.available2022-12-21T10:36:51Z-
dc.date.created2022-09-16-
dc.date.issued2006-09-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181067-
dc.description.abstractWe present experimental results for laser-induced Au nanoparticle (NP) embedded in a HfO2 high-k dielectric matrix. Cross-sectional transmission electron microscopy images showed that the Au NPs of 8 nm in diameter were clearly embedded in HfO2 matrix. Capacitance-voltage measurements of Pt/HfO2/Au NPs/HfO2 on p-type Si substrate reliably exhibited metal-oxide-semiconductor behavior with a large flatband shift of 4.7 V. In addition, the charge retention time at room temperature was found to exceed 10(5) h. This longer time was attributed to the higher electron barrier height via high work function of the Au NP.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleEnhanced electrical characteristics of Au nanoparticles embedded in high-k HfO2 matrix-
dc.typeArticle-
dc.contributor.affiliatedAuthorHong, Jin Pyo-
dc.identifier.doi10.1063/1.2347703-
dc.identifier.scopusid2-s2.0-33749321256-
dc.identifier.wosid000240876600138-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.100, no.6-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume100-
dc.citation.number6-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSILICON-NITRIDE-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusRETENTION-
dc.subject.keywordPlusOXIDES-
dc.subject.keywordPlusCHARGE-
dc.subject.keywordPlusBEAM-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.2347703-
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