Structural, optical, and magnetic properties of As-doped (Zn0.93Mn0.07)O thin films
- Authors
- Lee, Sejoon; Kim, Deuk Young; Shon, Yoon; Yoon, Chong S.
- Issue Date
- Jul-2006
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.89, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 89
- Number
- 2
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181278
- DOI
- 10.1063/1.2221901
- ISSN
- 0003-6951
- Abstract
- The As-doped (Zn0.93Mn0.07)O thin film prepared by As+ ion implantation showed a clear peak of (A(0),X) having acceptor binding energy of 181 meV. The sample showed high T-C ferromagnetism persisting up to 285 K. The contribution of magnetization from Mn ion at 280 K was determined to be 0.13 mu(B)/Mn. The improved ferromagnetism is expected to be originated from hole-induced ferromagnetism and enhanced magnetic anisotropy because crystallographically improved sample showed p-type conductivity with hole concentration of 4.8 X 10(18) cm(-3) and hole mobility of 11.8 cm(2) V-1 s(-1). These results suggest that high T-C ferromagnetism can be realized by codoping the acceptor dopant and improving the magnetic anisotropy.
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