Band-edge exciton transitions in (Ga1-xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition
- Authors
- Jeon, Hee Change; Kang, Taewon Wang; Kim, Tae Whan; Cho, Yong Hoon
- Issue Date
- Jun-2006
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- magnetic films; epitaxy; impurities in semiconductor; optical properties
- Citation
- SOLID STATE COMMUNICATIONS, v.138, no.9, pp.444 - 447
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 138
- Number
- 9
- Start Page
- 444
- End Page
- 447
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181406
- DOI
- 10.1016/j.ssc.2006.04.010
- ISSN
- 0038-1098
- Abstract
- (Ga1-xMnx)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga1-xMnx)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga1-xMnx)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga1-xMnx)N thin films appeared. These results indicate that the (Ga1-xMnx)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.
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