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Structural and optical properties of CdxZn1-xTe/ZnTe quantum dots grown on Si(100) substrates by using molecular beam epitaxy
- Authors
- Lee, Hong Seok; Park, Hong Lee.; Kim, Tai-Woong
- Issue Date
- Jun-2006
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- atomic force microscopy; nanostructures; X-ray diffraction; molecular beam epitaxy; semiconducting ternary compounds
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.292, no.1, pp.10 - 13
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 292
- Number
- 1
- Start Page
- 10
- End Page
- 13
- ISSN
- 0022-0248
- Abstract
- We have studied structural and optical properties of self-assembled Cd0.6Zn0.4Te/ZnTe quantum dots (QDs) grown on Si(100) substrates by using molecular beam epitaxy. X-ray diffraction patterns indicated that the ZnTe buffer layers grown on the Si substrates were hetero-epitaxial films with the (100) orientation. The atomic force microscopy images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on Si(100) substrates. The photoluminescence spectra at 32 K showed the dominant excitonic peaks corresponding to the interband from the ground-state electronic sub-band to the ground-state heavy-hole band in the Cd0.6Zn0.4Te/ZnTe QDs. The present results can help to improve the understanding of the structural and interband transition properties in Cd0.6Zn0.4Te/ZnTe QDs grown on Si(100) substrates.
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