Two-terminal artificial synapse with hybrid organic-inorganic perovskite (CH₃NH₃)PbI₃ and low operating power energy (∼47 fJ/μm²)
DC Field | Value | Language |
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dc.contributor.author | Ku, Boncheol | - |
dc.contributor.author | Koo, Bonkee | - |
dc.contributor.author | Sokolov, Andrey Sergeevich | - |
dc.contributor.author | Ko, Min Jae | - |
dc.contributor.author | Choi, Changhwan | - |
dc.date.accessioned | 2021-07-30T04:52:46Z | - |
dc.date.available | 2021-07-30T04:52:46Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1814 | - |
dc.description.abstract | Organiceinorganic hybrid perovskite (CH3NH3)PbX3 [X = I-, Cl-, and Br-] materials were evaluated with memristors for resistive switching (RS) and synaptic functionalities. Analog or multilevel memory behaviors, as well as digital RS characteristics of the Ag/ MAPbI(3)/FTO device structure, were observed in the case of CH3NH3PbI3, whereas (CH3NH3)PbCl3 and (CH3NH3)PbBr3 showed no switching characteristics. The conduction mechanism of RS was dominated by ohmic conduction, space-charge-limited conduction (SCLC), and trap-filled SCLC in both the low-resistance state and the high-resistance state. It is considered that the formation of the b-AgI phase at the interface between Ag and MAPbI(3) thin films resulted in different RS and synaptic function behaviors. We successfully emulated the fundamental synaptic characteristics with only a Ag/MAPbI(3)/FTO memristor, such as the spike-rate-dependent plasticity, paired-pulse facilitation, post-tetanic potentiation, transition from short-term memory to long-term memory, and spike-timing dependent plasticity. The energy consumption of the MAPbI(3)-based memristor was estimated to be as low as 47 fJ/mm(2). Our results indicate that organiceinorganic hybrid perovskite (CH3NH3)PbI3 can be adopted in brain-inspired synaptic devices for hardware-based neuromorphic system applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Two-terminal artificial synapse with hybrid organic-inorganic perovskite (CH₃NH₃)PbI₃ and low operating power energy (∼47 fJ/μm²) | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ko, Min Jae | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1016/j.jallcom.2020.155064 | - |
dc.identifier.scopusid | 2-s2.0-85083266951 | - |
dc.identifier.wosid | 000535178400014 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.833, pp.1 - 9 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 833 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | RESISTIVE SWITCHING MEMORY | - |
dc.subject.keywordPlus | LONG-TERM POTENTIATION | - |
dc.subject.keywordPlus | LEARNING BEHAVIORS | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | PLASTICITY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MEMRISTORS | - |
dc.subject.keywordPlus | CELL | - |
dc.subject.keywordAuthor | Synaptic device | - |
dc.subject.keywordAuthor | Memristor | - |
dc.subject.keywordAuthor | Hybrid organic-inorganic perovskite | - |
dc.subject.keywordAuthor | Neuromorphic computing | - |
dc.subject.keywordAuthor | Plasticity | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0925838820314274?via%3Dihub | - |
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