Two-terminal artificial synapse with hybrid organic-inorganic perovskite (CH₃NH₃)PbI₃ and low operating power energy (∼47 fJ/μm²)
- Authors
- Ku, Boncheol; Koo, Bonkee; Sokolov, Andrey Sergeevich; Ko, Min Jae; Choi, Changhwan
- Issue Date
- Aug-2020
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Synaptic device; Memristor; Hybrid organic-inorganic perovskite; Neuromorphic computing; Plasticity
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.833, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 833
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1814
- DOI
- 10.1016/j.jallcom.2020.155064
- ISSN
- 0925-8388
- Abstract
- Organiceinorganic hybrid perovskite (CH3NH3)PbX3 [X = I-, Cl-, and Br-] materials were evaluated with memristors for resistive switching (RS) and synaptic functionalities. Analog or multilevel memory behaviors, as well as digital RS characteristics of the Ag/ MAPbI(3)/FTO device structure, were observed in the case of CH3NH3PbI3, whereas (CH3NH3)PbCl3 and (CH3NH3)PbBr3 showed no switching characteristics. The conduction mechanism of RS was dominated by ohmic conduction, space-charge-limited conduction (SCLC), and trap-filled SCLC in both the low-resistance state and the high-resistance state. It is considered that the formation of the b-AgI phase at the interface between Ag and MAPbI(3) thin films resulted in different RS and synaptic function behaviors. We successfully emulated the fundamental synaptic characteristics with only a Ag/MAPbI(3)/FTO memristor, such as the spike-rate-dependent plasticity, paired-pulse facilitation, post-tetanic potentiation, transition from short-term memory to long-term memory, and spike-timing dependent plasticity. The energy consumption of the MAPbI(3)-based memristor was estimated to be as low as 47 fJ/mm(2). Our results indicate that organiceinorganic hybrid perovskite (CH3NH3)PbI3 can be adopted in brain-inspired synaptic devices for hardware-based neuromorphic system applications.
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