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Influence of grain boundaries and-voids on the saturated magnetization in Fe3O4 films at a low magnetic field

Authors
Kim, Ki WoongYoon, Kap SooKoo, Ja HyunDo, Young HoKim, Chae OkHong, Jin Pyo
Issue Date
May-2006
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
magnetic domain; magnetic field effect; magnetic hysterisis; magnetic materials
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.42, no.5, pp.1495 - 1498
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON MAGNETICS
Volume
42
Number
5
Start Page
1495
End Page
1498
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181504
DOI
10.1109/TMAG.2006.871473
ISSN
0018-9464
Abstract
We report the magnetic behaviors of Fe3O4 thin films grown by zero field growth (ZFG) and field growth (FG) techniques during the sputtering process. In FG conditions, an in situ 300 Oe field during growth is applied to a substrate, inducing an easy axis of magnetization. Structural observations obtained by high-resolution transmission electron microscopy measurements clearly depicted a significant reduction of the grain boundaries and voids in the Fe,,3 04 films grown under FG conditions, thus explaining the saturated. magnetization of the Fe3O4 films at about 0.01 T. This behavior was expected due to a remarkable reduction of the antiferromagnetic exchange couplings between grains for FG conditions. In addition, the zero-field-cooled magnetization of the ZFG samples showed an abrupt change at about 285 K, confirming the existence of defects or other phases in the ZFG films.
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