Accelerated temperature and humidity testing of 2D SnS(2)thin films made via four-inch-wafer-scale atomic layer deposition

Abstract

Tin disulfide (SnS2) has emerged as a promising two-dimensional (2D) material due to its excellent electrical and optical properties. However, research into 2D SnS(2)has mainly focused on its synthesis procedures and applications; its stability to humidity and temperature has yet to be studied. In this work, 2D SnS(2)thin films were grown by atomic layer deposition (ALD) and characterized by various tools, such as x-ray diffraction, Raman analysis, and transmission electron spectroscopy. Characterization reveals that ALD-grown SnS(2)thin films are a high-quality 2D material. After characterization, a four-inch-wafer-scale uniformity test was performed by Raman analysis. Owing to the quality, large-area growth enabled by the ALD process, 98.72% uniformity was obtained. Finally, we calculated the thermodynamic equations for possible reactions between SnS(2)and H2O to theoretically presurmise the oxidation of SnS(2)during accelerated humidity and temperature testing. After the accelerated humidity and temperature test, x-ray diffraction, Raman analysis, and Auger electron spectroscopy were performed to check whether SnS(2)was oxidized or not. Our data revealed that 2D SnS(2)thin films were stable at humid conditions.